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MOCVD Growth
MOCVD (metal-organic
chemical vapor deposition) is a vapor-phase process for producing an
epitaxial film of semiconductor deposited on a single-crystal
substrate. MOCVD is a proven technique for obtaining high-quality,
high-purity epitaxial layers in a variety of material systems. Unlike
other vapor-phase epitaxy (VPE) techniques,
MOCVD utilizes metalorganics, such as trimethylindium (TMIn),
as sources for the Group III element. The Group V element is usually
a hydride such as phosphine (PH3).
Typically, the hydrides reacting with the metalorganic
sources in a hydrogen ambient under appropriate temperature and
pressure conditions produces molecules of the required semiconductor
material, which deposit on the substrate, giving an epitaxial layer.
MOCVD Crystal Growth Systems
 
 
Cleanroom Fabrication and Testing
Facility:
Schematic diagram of the MOCVD system at UMBC
Physical properties of various metalorganic
sources used in MOCVD
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