Publications:

These articles may be downloaded for personal use only. Any other use requires prior permission of the author and the Publisher.

2005-present:

44. David J. Meyer,  David A. Deen, David F. Storm, Mario G. Ancona, D. Scott Katzer, Robert Bass, Jason A. Roussos, Brian P. Downey, Steven C. Binari, Theodosia Gougousi, Tanya Paskova, Edward A. Preble, and Keith R. Evans; “High Electron Velocity Sub-Micron AlN/GaN HEMTs on Free-Standing GaN Substrates” IEEE Electron Device Letters 34(2) 199 – 201 (2013) .[pdf][abstract] Copyright © 2013 IEEE Electron Devices Society

43. Theodosia Gougousi and Liwang Ye; Interface Between Atomic Layer Deposition Ta2O5 Films and GaAs(100) Surfaces  J. Phys. Chem. C, 116 (16), 8924–8931 (2012).[pdf][abstract] Copyright © 2012 American Chemical Society

42. David A. Deen, David F. Storm, David J. Meyer, D. Scott Katzer, Robert Bass, Steven C. Binari, and Theodosia Gougousi; AlN/GaN HEMTs with high-k ALD HfO2 or Ta2O5 gate insulation Physica Status Solidi C: Current Topics in Solid State Physics, 8(7-8), 2420–2423 (2011).[pdf] [abstract] ©2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

41. D. J. Meyer, D. S. Katzer, D. A. Deen, D. F. Storm, S. C. Binari, and Theodosia Gougousi; HfO2-insulated gate N-polar GaN HEMTs with high breakdown voltage  Physica Status Solidi A: Applications and Materials Science, 208(7), 1630-1633 (2011).[pdf] [abstract] ©2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

40. D.A. Deen, D.F. Storm, R. Bass, D.J. Meyer, D. S. Katzer, S.C. Binari, J.W. Lacis, and Theodosia Gougousi; Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors Applied Physics Letters, 98, 023506 (2011).[pdf] [abstract] ©2011 American Institute of Physics

39. Theodosia Gougousi , Justin C. Hackley , J. Derek Demaree , and John W. Lacis; Growth and Interface Evolution of HfO2 Films on GaAs(100) Surfaces J. Electrochem. Soc., 157(5), H551-H556 (2010) [pdf] [abstract] ©2010 The Electrochemical Society

38. Gougousi Theodosia; and Lacis John W.; Native oxide consumption during the atomic layer deposition of TiO2 films on GaAs (100) surfaces Thin Solid Films, 518, 2006–2009 (2010) [ pdf ] [ abstract ] Copyright © 2009 Elsevier B.V.

37. Hackley Justin C.; and Gougousi Theodosia; Properties of atomic layer deposited HfO2 thin films Thin Solid Films 517, 6576-6583 (2009) [ pdf ] [ abstract ] Copyright © 2009 Elsevier B.V.

36. Hackley Justin C; Demaree J. Derek; Lacis John W.;and Gougousi Theodosia; Atomic Layer Deposition of Metal Oxide Films on GaAs (100) surfaces ) in CMOS Gate-Stack Scaling — Materials, Interfaces and Reliability Implications, edited by J. Butterbaugh, A. Demkov, R. Harris, W. Rachmady, B. Taylor (Mater. Res. Soc. Symp. Proc. Volume 1155, Warrendale, PA, 2009)1155-C10-03 [ pdf ] [ abstract ] © 2009 Materials Research Society.

35. D.A. Deen, S.C. Binari, D.F. Storm, D.S. Katzer, J.A. Roussos, J.C. Hackley, and Theodosia Gougousi; AlN/GaN insulated gate HEMTs with HfO2 gate dielectric Electron. Lett. 45, 423-424, (2009) [ pdf ] [ abstract ] Copyright 2009 IEEE.

34. Hackley Justin C; Demaree J. Derek; and Gougousi Theodosia; Growth and interface of HfO 2 films on H-terminated Si from a TDMAH and H 2O atomic layer deposition process, J. Vac. Sci. Technol. A (2008) 25(5), 1235-1240 [ pdf ][ abstract ] Copyright 2008 American Vacuum Society..

33. Hackley Justin C; Demaree J. Derek; and Gougousi Theodosia; Atomic Layer Deposition of HfO2 Thin Films on Si and GaAs Substrates in Materials Science of High-k Dielectric Stacks—From Fundamentals to Technology, edited by L. Pantisano, E. Gusev, M. Green, M. Niwa (Mater. Res. Soc. Symp. Proc. Volume 1073E, Warrendale , PA , 2008) [ pdf ] [ abstract ] © 2008 Materials Research Society.

32. Hackley Justin C; Demaree J. Derek; and Gougousi Theodosia; Interface of atomic layer deposited HfO2 films on GaAs (100) surfaces, Applied Physics Letters 92(16), 162902 (2008) [ pdf ] [ abstract ] Copyright 2008 American Institute of Physics. Selected for a simultaneous publication in the Virtual Journal of Nanoscale Science & Technology 17(18), 2008

31. Gougousi Theodosia; Chen Zhiying; Low temperature deposition of metal oxide thin films in supercritical carbon dioxide using metal-organic precursors in Organic/Inorganic Hybrid Materials— edited by R.M. Laine, C. Sanchez, C. Barbé , U. Schubert (Mater. Res. Soc. Symp. Proc. Volume 1007, Warrendale, PA, 2007), [ pdf ] [ abstract ] © 2007 Materials Research Society

30. Gougousi Theodosia; Zhiying Chen; Deposition of Yttrium Oxide Thin Films in Supercritical Carbon Dioxide Thin Solid Films 516, 6197–6204 (2008) [ pdf ] [ abstract ] Copyright © 2008 Elsevier B.V.

29. Hackley Justin C; Demaree J. Derek; and Gougousi Theodosia; Nucleation of HfO2atomic layer deposition films on chemical oxide and H-terminated Si J. Appl. Phys. 102, 034101 (2007) [ pdf ] [ abstract ] Copyright 2007 American Institute of Physics.

28. Hackley Justin C; Demaree J. Derek; and Gougousi Theodosia; Nucleation Studies of HfO2 Thin Films Produced by Atomic Layer Deposition Characterization of Oxide/ Semiconductor Interfaces for CMOS Technologies, edited by Y. Chabal, A. Estève, N. Richard, G. Wilk (Mater. Res. Soc. Symp. Proc. Volume 996E, Warrendale, PA, 2007),[ pdf ] [ abstract ] © 2007 Materials Research Society

27. Gougousi Theodosia; Terry David B.; and Parsons Gregory N. Charge generation during oxidation of thin Hf metal films on silicon Thin Solid Films 513(1-2), 201-205 (2006) [ pdf ] [ abstract ] Copyright © 2006 Elsevier B.V.

26. Barua, Dipak; Gougousi, Theodosia; Young, Erin D.; Parsons, Gregory N. Supercritical-Carbon-Dioxide-Assisted Cyclic Deposition of Metal Oxide and Metal Thin Films Applied Physics Letters (2006) 88, 092904 [ pdf ] [ abstract ] Copyright 2006 American Institute of Physics.

25. Gougousi, Theodosia; Barua, Dipak; Young, Erin D.; Parsons, Gregory N. Metal Oxide Thin Films Deposited from Metal Organic Precursors in Supercritical CO2 Solutions Chemistry of Materials (2005) 17(20) pp 5093 - 5100 [ pdf ] [abstract] Copyright 2005 American Chemical society .

24. Park Kie-Jin; Doub Jason M.; Gougousi Theodosia; and Parsons Gregory N. Microcontact patterning of ruthenium gate electrodes by selective area atomic layer deposition Appl. Phys. Lett. (2005) 86, 051903 [ pdf ] [ abstract ] Copyright 2005 American Institute of Physics.

Before 2004:

23.Gougousi, Theodosia; and Parsons, Gregory N. Post-Deposition Reactivity of Sputter-Deposited High-Dielectric-Constant Films with Ambient H2O and Carbon-Containing Species J. Appl. Phys. (2004), 95(3), 1391-1696 [pdf ] [ abstract ] Copyright 2004 American Institute of Physics.

22. Gougousi Theodosia; Niu Dong, Ashcraft Robert W., and Parsons Gregory N. Carbonate Formation During Post-Deposition Ambient Exposure of High-k Dielectrics Appl. Phys. Lett. (2003) 83(17), 3543-3545 [pdf] [ abstract ] Copyright 2003 American Institute of Physics.

21. Gougousi, Theodosia; Kelly, M. Jason; and Parsons, Gregory N. Kinetics Of Charge Generation During Formation Of Hf And Zr Silicate Dielectrics dielectrics in CMOS Front-End Materials and Process Technology edited by Tsu-Jae King, Bin Yu, Robert J.P. Lander, Shuichi Saito (Mat. Res. Soc. Symp. Proc. Volume 765D, Warrendale, PA, 2003), D3.4, [pdf ] © 2003 Materials Research Society

20. Gougousi, Theodosia; Kelly, M. Jason; Terry, David B.; and Parsons, Gregory N. Properties of La-silicate high-k dielectric films formed by oxidation of La on Silicon , J. Appl. Phys. (2003), 93(3), 1691-1696 [ pdf ][ abstract ] Copyright 2003 American Institute of Physics.

19. Xu, Yiheng; Gougousi, Theodosia; Henn-Lecordier, Laurent; Liu, Yijun; Cho, Soon; and Rubloff, Gary W. Thickness Metrology and End Point Control in W-CVD Process from SiH4/WF6 Using in-situ Mass Spectrometry , J. Vac. Sci. Technol., B (2002), 20(6) 2351-2360.[pdf] [ abstract ] Copyright 2002 American Vacuum Society

18. Gougousi, Theodosia; Kelly, Michael J.; Parsons, Gregory N. The role of the OH species in high-k/polysilicon gate electrode interface reactions Appl. Phys. Let. (2002) 80(23), 4419-4421. [pdf] [ abstract ] Copyright 2002 American Institute of Physics.

17. Sreenivasan, Ramaswamy; Gougousi, Theodosia; Xu, Yiheng; Kidder, John, N. Jr.; Zafiriou, Evanghelos; Rubloff, Gary W. Run to run control in tungsten chemical vapor deposition using H2/WF6 at low pressures J. Vac. Sci. Technol., B (2001), 19(5), 1931-1941. [ pdf ][ abstract ] Copyright 2001 American Vacuum Society.

16. Gougousi, Theodosia; Sreenivasan, Ramaswamy; Xu, Yiheng; Henn-Lecordier, Laurent; Rubloff, Gary W.; Kidder, John N., Jr.; Zafiriou, Evanghelos. In-situ sensing using mass spectrometry and its use for run-to-run control on a W-CVD cluster tool
AIP Conf. Proc. (2001), 550 (Characterization and Metrology for ULSI Technology), 249-253. [ pdf ] [ abstract ] Copyright 2001 American Institute of Physics.

15. Johnsen, Rainer; Skrzypkowski, Miroslaw; Gougousi, Theodosia; Rosati, Richard; Golde, Michael. F. Optical Spectroscopy of Recombining Ions in Flowing Afterglow Plasmas , The Dissociative Recombination of Molecules with Electrons, [Proceedings of
the American Chemical Society Symposium "Dissociative Recombination of Molecules with Electrons"], Chicago, ed. S. L. Guberman, (Kluwer Academic / Plenum Publishers), (2003) [ pdf ].

14. Gougousi, Theodosia; Xu, Yiheng; Kidder, John N., Jr.; Rubloff, Gary W.; Tilford, Charles R. Process diagnostics and thickness metrology using in situ mass spectrometry for the chemical vapor deposition of W from H2/WF6 J. Vac. Sci. Technol., B (2000), 18(3), 1352-1363. [ pdf ] [ abstract ] Copyright 2000 American Vacuum Society.

13. Gougousi, Theodosia; Xu, Yiheng; Henn-Lecordier, Laurent; Kidder John N., Jr; Rubloff Gary W.; Tilford, Charles C.
Real-Time Chemical Sensing in Thin Film Multicomponent CVD
, AVS 2nd International Conference on Advanced Materials and Processes for Microelectronics (2000) [ pdf ] Copyright 2000 American Vacuum Society.

12. Johnsen, Rainer; Skrzypkowski, Miroslaw; Gougousi, Theodosia; Golde, Michael. F. Spectroscopic emissions from the recombination of N2O+, N2OH+/HN2O+, CO2+, CO2H+, HCO+/COH+, H2O+, NO2+, HNO+, and LIF measurements of the H atom yield from H3+. Dissociative Recombination: Theory, Experiment and Applications IV, Proceedings of the Conference, Stockholm, Sweden, June 16-20, 1999, 200-209, (2000) [ pdf ].

11. Samartzis, Peter C.; Gougousi, Theodosia; Kitsopoulos, Theofanis N. Photofragmentation of Cl2 at 308 nm. Laser Chem. (1998), 17(4), 185-190.

10. Skrzypkowski, Miroslaw P.; Gougousi, Theodosia; Johnsen, Rainer; Golde, Michael F. Measurement of the absolute yield of CO(a3P) + O products in the dissociative recombination of CO2+ ions with electrons J. Chem. Phys. (1998), 108(20), 8400-8407. [ pdf ] [ abstract ] Copyright 1998 American Institute of Physics.

9. Gougousi, Theodosia; Samartzis, Peter C.; Kitsopoulos, Theofanis N. Photodissociation study of CH3Br in the first continuum J. Chem. Phys. (1998), 108(14), 5742-5746. [ pdf ] [ abstract ] Copyright 1998 American Institute of Physics.

8. Gougousi, Theodosia; Johnsen, Rainer; Golde, Michael F. Yield determination of OH (v=0,1) radicals produced by the electron-ion recombination of protonated molecules J. Chem. Phys. (1997), 107(7), 2440-2450. [ pdf ] [ abstract ] Copyright 1997 American Institute of Physics.

7. Gougousi, Theodosia; Johnsen, Rainer; Golde, Michael F. Yield determination of OH(v = 0, 1) radicals produced by the electron-ion recombination of H3O+ ions J. Chem. Phys. (1997), 107(7), 2430-2439. [ pdf ] [ abstract ] Copyright 1997 American Institute of Physics.

6. Samartzis, Peter C.; Sakellariou, Ioannis; Gougousi, Theodosia; Kitsopoulos, Theofanis N. Photofragmentation study of Cl2 using ion imaging . J. Chem. Phys. (1997), 107(1), 43-48. [ pdf ] [ abstract ] Copyright 1997 American Institute of Physics.

5. Gougousi, Theodosia; Golde, Michael F.; Johnsen, Rainer. Electron-ion recombination rate coefficient measurements in aflowing afterglow plasma . Chem. Phys. Lett. (1997), 265(3-5), 399-403. [ pdf ] [ abstract ] Copyright © 1997 Published by Elsevier Science B.V.

4. Johnsen, Rainer; Gougousi, Theodosia; Golde, Michael F. Recombination of H3+ and D3+ ions with electrons. AIP Conf. Proc. (1995), 360 (Physics of Electronic and Atomic Collisions), 835-844.

3. Johnsen, Rainer; Gougousi, Theodosia; Golde, Michael F. Flowing-afterglow measurements of the recombination of H3+ and D3+ ions. Dissociative Recomb., Proc. Workshop, 3rd (1996), Meeting Date 1995, 195-206.

2. Gougousi, Theodosia; Johnsen, Rainer; Golde, Michael F. Recombination of H3+ and D3+ ions in a flowing afterglow plasma Int. J. Mass Spectrom. Ion Processes (1995), 149/150 131-151. [ pdf ] [ abstract ] Copyright © 1995 Published by Elsevier Science B.V.

1. Johnsen, Rainer; Shun'ko, Eugeny V.; Gougousi, Theodosia; Golde, Michael F. Langmuir-probe measurements in flowing afterglow plasmas Phys. Rev. E: Stat. Phys., Plasmas, Fluids, Relat. Interdiscip. Top. (1994), 50(5), 3994-4004. [ pdf ] [ abstract ] Copyright 1994 American Institute of Physics.

 

Page last updated by Theodosia Gougousi, on February 17, 2013

Materials and Interface Physics Lab